Ga-Doped ZnO Coating—A Suitable Tool for Tuning the Electrode Properties in the Solar Cells with CdS/ZnS Core-Shell Quantum Dots

نویسندگان

چکیده

Two layer system from sputtered indium tin oxide (ITO) and gallium doped zinc (Ga:ZnO, GZO) were studied for transparency in the visible electromagnetic range, reflectivity near infrared conductivity valent band a solar cells with quantum dots. The bi-layer coatings produced at optimized oxygen partial pressure, films thickness surface roughness exhibit improved optical properties without worsening electrical parameters, even if additional introduction during reactive sputtering of GZO. With an average transmittance 91.3% reflection resistivity lower than 0.4 × 10−2 Ω.cm, these are suitable top electrode cells. obtained results reveal that multilayered stacks transparent ITO/Ga-doped ZnO possess relatively low (7–9 nm) appropriate refractive index. oxidation GZO induces modification film respectively their performances.

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ژورنال

عنوان ژورنال: Crystals

سال: 2021

ISSN: ['2073-4352']

DOI: https://doi.org/10.3390/cryst11020137